Infineon IPP200N15N3G: High-Performance 15V OptiMOS 5 Power MOSFET for Efficient Power Conversion

The relentless pursuit of higher efficiency and power density in modern electronics places immense demands on power switching components. Addressing this challenge head-on, the Infineon IPP200N15N3G stands out as a premier 15V N-channel power MOSFET engineered with Infineon's advanced OptiMOS™ 5 technology. This device is specifically designed to set new benchmarks in performance for a wide range of power conversion applications, from server and telecom supplies to motor drives and synchronous rectification.

At the heart of this MOSFET's superiority is its exceptionally low figure-of-merit (FOM), a critical parameter defined by the product of on-state resistance (R DS(on)) and gate charge (Q G). The IPP200N15N3G boasts an ultra-low R DS(on) of just 0.95mΩ (max. at V GS = 10V), which directly translates to minimized conduction losses. This allows the device to handle high continuous drain currents (I D) up to 200A with remarkable efficiency. Simultaneously, its optimized gate charge ensures swift switching transitions, drastically reducing switching losses. This combination is pivotal for achieving high-frequency operation, which in turn enables the design of smaller, lighter magnetics and filter components, pushing the boundaries of power density.

The benefits of the OptiMOS™ 5 technology extend beyond raw electrical performance. The device features an intrinsically fast and rugged body diode, which is essential for hard-switching topologies like power factor correction (PFC) stages and in synchronous rectification circuits. This robust diode characteristic enhances the overall reliability of the system. Furthermore, the MOSFET offers an excellent safe operating area (SOA), providing designers with greater margin and confidence in demanding conditions.

Housed in a TO-220 FullPAK package, the IPP200N15N3G offers a proven and robust mechanical form factor. This package type provides the necessary mechanical strength and thermal performance, facilitating efficient heat dissipation away from the silicon die, which is crucial for maintaining performance under high-power conditions.

ICGOOFIND: The Infineon IPP200N15N3G is a benchmark 15V power MOSFET that masterfully balances ultra-low conduction losses with fast switching performance. Its exceptional efficiency, driven by OptiMOS™ 5 technology, makes it an ideal cornerstone for engineers designing next-generation high-efficiency, high-power-density SMPS, VRMs, and motor control systems.

Keywords: OptiMOS™ 5, Low R DS(on), High Power Density, Efficient Power Conversion, Synchronous Rectification