Infineon IPD22N08S2L-50: A 50V Single N-Channel OptiMOS Power MOSFET for High-Efficiency Applications

The relentless pursuit of higher efficiency and power density in modern electronics drives the continuous innovation in power semiconductor technology. At the forefront of this evolution is Infineon's OptiMOS™ power MOSFET family, renowned for its exceptional performance. The IPD22N08S2L-50 stands as a prime example, a 50V single N-channel MOSFET engineered to set new benchmarks in power conversion applications.

This device is specifically designed to minimize energy losses, a critical factor in systems ranging from server and telecom power supplies to motor drives and battery management. Its core strength lies in its extremely low typical on-state resistance (R DS(on)) of just 0.8 mΩ (max. @ V GS = 10 V). This remarkably low resistance directly translates to reduced conduction losses, allowing for more current to be handled with less wasted energy in the form of heat.

Complementing its low R DS(on) is an outstanding gate charge (Q G) performance. The low gate charge ensures swift switching transitions, which drastically cuts switching losses. This combination is the key to achieving high efficiency, particularly in high-frequency switching circuits. Designers can leverage this to either push for higher operating frequencies, enabling the use of smaller passive components like inductors and capacitors, or to build more efficient systems that run cooler and require less bulky heat sinking.

Furthermore, the IPD22N08S2L-50 is housed in an advanced, space-saving D 2PAK (TO-263) SMD package. This package is not only robust but also offers an excellent power-to-footprint ratio, making it an ideal choice for compact, high-power-density designs. Its high body diode robustness ensures reliable operation during reverse recovery conditions, a vital characteristic for bridge topology applications like motor control and synchronous rectification.

In summary, the Infineon IPD22N08S2L-50 is a superior power MOSFET that delivers a potent blend of ultra-low conduction loss, fast switching capability, and proven reliability. It empowers engineers to create the next generation of high-efficiency, power-dense, and thermally optimized electronic systems.

ICGOODFIND: The Infineon IPD22N08S2L-50 OptiMOS™ MOSFET is a high-performance switch defined by its ultra-low R DS(on) and Q G, making it a cornerstone component for maximizing efficiency and power density in demanding 50V applications.

Keywords: Low RDS(on), High Efficiency, OptiMOS™, Power MOSFET, Fast Switching