Infineon IPB027N10N3GATMA1: A 100V OptiMOS 5 Power MOSFET for High-Efficiency Power Conversion

The relentless pursuit of higher efficiency and power density in modern electronics places immense demands on power switching components. At the heart of many advanced power conversion systems, from server SMPS and telecom bricks to motor drives and synchronous rectification, lies the power MOSFET. The Infineon IPB027N10N3GATMA1, a 100V N-channel MOSFET from the esteemed OptiMOS™ 5 technology family, stands out as a premier solution engineered to meet these challenges head-on.

This device is characterized by its exceptionally low figure-of-merit (FOM), a critical parameter defined by the product of its on-state resistance (RDS(on)) and total gate charge (Qg). With a maximum RDS(on) of just 2.7 mΩ at 10 V and an ultra-low gate charge, the IPB027N10N3GATMA1 achieves an optimal balance between conduction and switching losses. This translates directly into significantly reduced power dissipation, allowing designers to either extract more power from a given form factor or create cooler-running, more reliable systems.

The benefits of the OptiMOS 5 technology are multifaceted. The low switching losses enable higher switching frequencies, which in turn permits the use of smaller passive components like inductors and capacitors. This is a crucial step towards achieving higher overall power density. Furthermore, the high ruggedness and reliability of the component ensure robust operation under demanding conditions. Its 100V voltage rating provides a comfortable safety margin in 48V input bus applications, common in data communications and industrial environments, enhancing system longevity.

Housed in a space-saving Infineon PG-TDSON-8 package (2.3mm height), this MOSFET is ideal for applications where board space is at a premium. The package offers an excellent thermal footprint, ensuring efficient heat dissipation away from the silicon die. This combination of electrical superiority and advanced packaging makes the IPB027N10N3GATMA1 a versatile cornerstone for designers aiming to push the boundaries of performance in their next-generation power conversion designs.

ICGOOODFIND: The Infineon IPB027N10N3GATMA1 exemplifies the pinnacle of power MOSFET design, offering a superior blend of ultra-low RDS(on), minimal switching losses, and high power density. It is an optimal choice for engineers focused on maximizing efficiency and reliability in high-performance 48V-100V applications.

Keywords: OptiMOS 5, Low RDS(on), High-Efficiency, Power Density, Synchronous Rectification