On March 16, SK Hynix's 8-inch pure-play foundry SK keyfoundry announced the completion of its 450–2300V silicon carbide (SiC) planar MOSFET process platform—a major breakthrough in third-generation semiconductor technology.

This milestone marks the first tangible outcome following SK keyfoundry's acquisition of fellow SK Group company SK powertech, demonstrating early success in technology integration.

The new SiC planar MOSFET platform delivers proven high reliability and stability under high-voltage operation, with product yields exceeding 90%—showcasing strong commercial potential.

SK keyfoundry has already secured an order from a SiC design house for 1200V high-voltage products, currently under development and targeted for mass production in the first half of 2027.

ICgoodFind: SK keyfoundry's SiC breakthrough strengthens its competitiveness while advancing the global SiC industry, enabling better solutions across applications.