Bosch has introduced its third‑generation silicon carbide (SiC) chip, now sampling to global automakers. The chip delivers a 20% overall performance gain, boosting EV efficiency and range.

Since 2021, Bosch has shipped over 60 million SiC chips. The new chip is smaller, enabling more chips per wafer – a key to long‑term cost efficiency.

“SiC semiconductors are the metronome of e‑mobility,” said Dr. Markus Heyn, Bosch board member. “They control energy flow with maximum efficiency.”

Global capacity expansion:

• Upgrading Reutlingen, Germany fab to 200mm wafer production

• Investing ~€1.9B in Roseville, California facility – first customer samples this year

• Mid‑term target: hundreds of millions of SiC power semiconductors annually

China focus: Bosch has a dedicated SiC R&D team and test lab in Shanghai, plus local module production in Suzhou. The “global chip + local module + local R&D” model cuts time from sample to mass production.

The chip’s performance comes from the Bosch trench etch process – a proprietary technology since 1994 that builds high‑precision vertical structures in SiC, ideal for 800V platforms.

ICgoodFind: Bosch Gen3 SiC brings 20% higher performance and strong global/local supply – ready for 800V EV systems.