On July 10, Micron announced an upgraded U.S. investment plan, raising its long-term CAPEX target to over $250 billion by 2035, driven by sustained AI-driven memory demand. The company aims to locate roughly 40% of its DRAM production capacity on U.S. soil, generating significant direct and indirect employment.

The same day, Micron’s Clay, New York fab completed its first concrete pour – a full quarter ahead of schedule – transitioning from site prep to active construction. The company also disclosed plans to invest up to an additional $3 billion in U.S. semiconductor supply chain infrastructure.

CEO Sanjay Mehrotra attended the ceremony alongside federal and state officials. He stated that data and memory are the backbone of the modern economy, and the massive investment responds to both industry demand and the U.S. semiquincentennial moment. The New York project, which broke ground in January 2026, has already paid $675 million to local contractors – over half of all contracted value – with more than 80% of on-site workers hailing from New York State.

The New York site plans up to four fabs – the largest private investment in state history – expected to create 50,000 jobs, including roughly 9,000 direct Micron roles. In Idaho, the first fab is on track for mid-2027 production, with a second slated for late 2028. Virginia’s existing fab already produces 1α-process DDR4 for automotive, industrial, and aerospace markets. Combined, these projects are projected to support over 90,000 total jobs.

Micron also announced $250 million for a children’s savings account program and $50 million+ for community investment in education, STEM, workforce training, and veteran support.

From ICgoodFind: $250B over 10 years – Micron is playing the long game on U.S. DRAM. A quarter of global supply shifting stateside changes sourcing dynamics for every memory buyer. The real question: who builds the packaging and test capacity to match?